| PART |
Description |
Maker |
| IRFF330 |
3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET
|
New Jersey Semi-Conduct...
|
| IRF350-353 IRF351 IRF352 IRF353 IRF350 |
N-Channel Power MOSFETs, 15A, 350V/400V N沟道功率MOSFET5A条，350V/400V
N-Channel Power MOSFETs/ 15A/ 350V/400V
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| IRFR320 IRFU320 FN2412 IRFR3209A |
3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
From old datasheet system
3.1A 400V 1.800 Ohm N-Channel Power MOSFETs
3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs
0.4A, 400V, 3.607 Ohm,N-Channel PowerMOSFET(15A, 50V, 0.150 惟,N娌??澧?己?????OS?烘?搴??)
|
INTERSIL[Intersil Corporation]
HARRIS SEMICONDUCTOR
|
| IRF710 FN2310 |
2.0A, 400V, 3.600 Ohm,N-Channel PowerMOSFET(2.0A, 400V, 3.600 Ohm,N娌??澧?己?????OS?烘?搴??)
From old datasheet system
2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
2 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
HARRIS SEMICONDUCTOR
Intersil Corporation
|
| IRFU410 FN3372 IRFR410 |
1.5A, 500V, 7.000 Ohm, N-Channel Power
MOSFETs(1.5A, 500V, 7.000 Ω N沟道MOSFET)
From old datasheet system
1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs
1.5A / 500V / 7.000 Ohm / N-Channel Power MOSFETs
|
Intersil Corporation
|
| STM322 STM420 STM423 STM323 STM421 STM353 STM430 S |
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2.8A I(D) | TO-204AA
USB Port Lithium-Ion/Polymer Battery Charger
2A Lithium-Ion/Polymer Battery Charger
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 13A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 4.5A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 3.3A I(D) | TO-204AA
NanoPower Voltage Detectors
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2.2A I(D) | TO-204AA
1A Linear Li-Ion Battery Charger in 2.2x2.2mm STDFN
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 11A I(D) | TO-3 晶体管| MOSFET的| N沟道| 400V五（巴西）直| 11A条（丁）|
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 2.8A I(D) | TO-204AA 晶体管| MOSFET的| N沟道| 350V五（巴西）直| 2.8AI（四）|04AA
|
Atmel, Corp.
|
| IRF740S 6111 |
N-Channel 400V-0.48Ω-10A- D2PAK PowerMESHTM MOSFET(N沟道MOSFET) N沟道400V -0.48Ω- 10A条，采用D2PAK PowerMESHTM MOSFET的（不适用沟道MOSFET的）
N-Channel 400V-0.48Ω-10A- D2PAK PowerMESHTM MOSFET(N沟道MOSFET)
From old datasheet system
N - CHANNEL 400V - 0.48 - 10 A -D 2 PAK PowerMESH TM MOSFET
N - CHANNEL 400V - 0.48 ohm - 10 A - D2PAK PowerMESH] MOSFET
N - CHANNEL 400V - 0.48 Ohm -10 A -D 2 PAK PowerMESH MOSFET
|
STMicroelectronics N.V.
意法半导
SGS Thomson Microelectronics
|
| IRFF310 FN1888 |
1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET
From old datasheet system
1.35A 400V 3.600 Ohm N-Channel Power MOSFET
1.35A/ 400V/ 3.600 Ohm/ N-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| AQV210EAX AQV210EHAX AQV214EAX |
PhotoMOS relay, GU (general use) E-type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 350V, load current 130 mA. Tape and reel packing style, picked from the 1/2/3-pin side.
PhotoMOS relay, GU (general use) E-type, 1-channel (form A ) type. I/O isolation: reinforced 5,000 VAC. Output rating: load voltage 350V, load current 130 mA. Tape and reel packing style, picked from the 1/2/3-pin side.
PhotoMOS relay, GU (general use) E-type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 400V, load current 120 mA. Tape and reel packing style, picked from the 1/2/3-pin side.
|
Matsushita Electric Works(Nais)
|
| 526-33AB20-153 |
500 Series surface temperature probe, NTC, 15,000 Ohm,
|
Honeywell
|
|
